Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon

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Published: 2013-09-30
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Ahmed Kh. AL-Kadumi
University of Zakho image/svg+xml
Alwan M. Alwan
Al-Technology University
Ali H. Al-Batat
Al-Mustansirya University

Abstract

The present work is the study of the dark current density for porous silicon which is  prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm)  under different anodization time(50,60)minute. ,The results obtained from this study shows different characteristics that  of porous for the different porous Silicon layers. The empirical data of J-V characteristics are compared by using mathematical(a Poole-Frenkel-like, Schottky diode) models prepared the with assistance of Matlab program.

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Issue

Vol. 1 No. 2 (2013): September, 2013

Section

Science Journal of University of Zakho
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Author Biographies

Ahmed Kh. AL-Kadumi, University of Zakho

Department of Physics, Faculty of Scince, University of Zakho, Kurdistan Region – Iraq.

Alwan M. Alwan, Al-Technology University

Department of Laser Physics, Al-Technology University, Iraq.

Ali H. Al-Batat, Al-Mustansirya University

Department of Physics, College of Education, Al-Mustansirya University, Iraq.

How to Cite

AL-Kadumi, A. K., Alwan, A. M., & Al-Batat, A. H. (2013). Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon. Science Journal of University of Zakho, 1(2), 874-881. https://www.stest.uoz.edu.krd/index.php/sjuoz/article/view/448